- Manufacturer :
- Toshiba
- Product Category :
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 100 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 10 V
- Gain Bandwidth Product fT :
- 250 MHz
- Maximum DC Collector Current :
- 100 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Series :
- RN1901
- Transistor Polarity :
- NPN
- Datasheets
- RN1901,LF(CT
Manufacturer related products
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 8A low Vclamp: 7.5V Rdyn: 0.2Ohm Vrwm: 3.6V SOD-962
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.1Ohm VBR:6.2V Vrwm: 5.5V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Bi-directional ESD Protection Diode high IPP: 27A low Rdyn: 0.12Ohm VBR:5.0V Vrwm: 3.6V SOD-882
-
ToshibaESD Suppressors / TVS Diodes Uni-Directional ESD Protection Diode VRWM= 3.3V Rdy=0.3 Ohm CT=0.6pF
-
Catalog related products
Related products
Part | Manufacturer | Stock | Description |
---|---|---|---|
RN1901,LXHF(CT | Toshiba | 19,237 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-sym) NPN x 2 , R1=4.7kOhm, R2=4.7kOhm, VCEO=50V, IC=0.1A (SOT-363) |
RN1901FE,LXHF(CT | Toshiba | 37 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-symmetrical) NPN x 2 Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-563) |
RN1901FETE85LF | Toshiba | 82 | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V |
RN1902 | Toshiba | 9,823 | New original |
RN1902,LF(CT | Toshiba | 11,557 | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor |
RN1902,LXHF(CT | Toshiba | 19,237 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=10kOhm, R2=10kOhm, VCEO=50V, IC=0.1A (SOT-363) |
RN1902.LF(CT | Toshiba | 115,237 | New original |
RN1902FE | Toshiba | 307,237 | New original |
RN1902FE,LF(CT | Toshiba | 52,674 | Bipolar Transistors - Pre-Biased TRANSISTOR |
RN1903(T5L,F,T) | Toshiba | 37 | Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V |
RN1903,LF(CT | Toshiba | 37 | Bipolar Transistors - Pre-Biased BIAS RESISTOR Built- in Transistor 2-in-1 |
RN1903,LXHF(CT | Toshiba | 19,237 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=22kOhm, R2=22kOhm, VCEO=50V, IC=0.1A (SOT-363) |
RN1903FE,LF(CT | Toshiba | 38,434 | Bipolar Transistors - Pre-Biased TRANSISTOR |
RN1904,LF(CT | Toshiba | 5,801 | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor |
RN1904,LXHF(CT | Toshiba | 19,237 | Bipolar Transistors - Pre-Biased AUTO AEC-Q 2-in-1 (Point-Sym) NPN x 2 , R1=47kOhm, R2=47kOhm, VCEO=50V, IC=0.1A (SOT-363) |