BSM200GB120DN2
- Mfr.Part #
- BSM200GB120DN2
- Manufacturer
- Infineon Technologies
- Package/Case
- Half Bridge2
- Datasheet
- Download
- Description
- IGBT Modules 1200V 200A DUAL
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- Manufacturer :
- Infineon Technologies
- Product Category :
- IGBT Modules
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.5 V
- Configuration :
- Half Bridge
- Continuous Collector Current at 25 C :
- 290 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- Half Bridge2
- Packaging :
- Tray
- Pd - Power Dissipation :
- 1.4 kW
- Product :
- IGBT Silicon Modules
- Datasheets
- BSM200GB120DN2
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