GS66504B-MR
- Mfr.Part #
- GS66504B-MR
- Manufacturer
- GaN Systems
- Package/Case
- DIE
- Datasheet
- Download
- Description
- MOSFET 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled
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- Manufacturer :
- GaN Systems
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 15 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- Die
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- -
- Qg - Gate Charge :
- 3.3 nC
- Rds On - Drain-Source Resistance :
- 130 mOhms
- Technology :
- GaN-on-Si
- Tradename :
- GaNPX
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.1 V
- Datasheets
- GS66504B-MR
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Catalog related products
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| GS66502B-MR | GaN Systems | 34,146 | MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66502B-TR | GaN Systems | 37 | MOSFET 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66504B-TR | GaN Systems | 37 | MOSFET 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled |
| GS66506T-MR | GaN Systems | 1,775 | MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled |
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| GS66508B-EVBDB1 | GaN Systems | 284 | Power Management IC Development Tools GS66508B Half Bridge Daughter Board |
| GS66508B-MR | GaN Systems | 5,052 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooling |
| GS66508B-TR | GaN Systems | 37 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooling |
| GS66508T-EVBDB2 | GaN Systems | 265 | Power Management IC Development Tools GS66508T Half Bridge Daughter Board |
| GS66508T-MR | GaN Systems | 16,674 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66508T-TR | GaN Systems | 37 | MOSFET 650V, 30A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66516B-MR | GaN Systems | 12,524 | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66516B-TR | GaN Systems | 37 | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling |
| GS66516T-EVBDB2 | GaN Systems | 252 | Power Management IC Development Tools GS66516T Half Bridge Daughter Board |
| GS66516T-MR | GaN Systems | 35,593 | MOSFET 650V, 60A, GaN E-mode, GaNPX package, Top-side cooling |
